MOSFET 1200V Full SiC Evaluation Sample
• Extremely low inductance design: LCE=6nH
• Press-Fit contact technology
• Rugged mounting due to integrated mounting clamps
• Heat transfer and insulation through direct copper bonded aluminum oxide ceramic (DBC)
• 1200V CoolSiC MOSFET
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor
Informations de base :
Marquage fabricant | SK200MB120TSCE2 |
Type de composant: | SiC MOSFET Tranzistor |
Kategorie | Full SiC (MOS-BD) |
Configuration: | Half Bridge 1*(Phase Leg) |
Spécifications: | SiC N-Channel MOSFET |
Construction: | 2*FET-BD |
Type de cas: | Modul |
Cas [inch] : | SEMITOP-E2 |
Type de matériel: | SiC Full |
RoHS | Oui |
REACH | Non |
NOVINKA | N |
RoHS1 | Ano |
Emballage et poids :
Unité: | pcs |
Poids: | 35 [g] |
Type d’emballage: | BOX |
Petit paquet (nombre d'unités): | 12 |
Paramètres électro-physiques:
Udc (URRM, UCEO, Umax) | 1200 [V] |
Idc max (Tc/Ta=70÷79°C) | 137 [A] |
Uisol (@25°C/1min/50Hz) | 2500 [V] |
Input Logic Level (Ugs level) | 15V |
tr (Turn-on / rise time) | 24 [ns] |
tf (turn-off=fall time) | 10 [ns] |
Qg (Total Gate Charge) | 372 [nC] |
Cin/CL Load Capacitance | 12000 pF |
Paramètres thermiques et mécaniques:
Tmin (température minimale de travail) | -40 [°C] |
Tmax (température maximale de service) | 175 [°C] |
Rthjc (case) | 0.3 [°C/W] |
L - Longueur | 57 [mm] |
W - Largeur | 63 [mm] |
H - Hauteur | 17 [mm] |