MSCSM120AM02CT6LIAG
MOSFET 1200V Full SiC MOS + SiC Diode
| ID Code: | 185251 |
| Fabricant: | Microsemi / Microchip Technology |
| Prix avec TVA : | 1 724,8024 € |
| Prix hors TVA : | 1 425,4566 € |
| VAT: | 21 % |
| Disponibilité: | sur demande |
| Stock total: | 0 pcs |
| Marquage fabricant: | MSCSM120AM02CT6LIAG |
| Unité:: | pcs |
| !_prehled mnozstevnich slev_! | Quantité | Prix hors TVA | Prix avec TVA |
| 1 + | 1 425,4566 € | 1 724,8024 € |
| 3 + | 1 282,8998 € | 1 552,3088 € |
| 6 + | 1 104,7408 € | 1 336,7364 € |
| 12 + | 1 069,1016 € | 1 293,6130 € |
MOSFET 1200V Full SiC Very Low Stray Inductance Phase Leg SiCThe following are the features of MSCSM120AM02CT6LIAG device:
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
Informations de base :
| Marquage fabricant | MSCSM120AM02CT6LIAG |
| Type of casing: | MODUL |
| Cas: | !_modul-t6li_! |
| Kategorie | Full SiC (MOS+D) |
| Type de composant: | !_n-mosfet_! |
| Configuration: | !_half bridge_! |
| Type de matériel: | !_sic full_! |
| Material Base | Cu |
| RoHS | Oui |
| REACH | Oui |
| NOVINKA | A |
| RoHS1 | Ano |
| UL94 | V-0 |
Emballage et poids :
| Unité: | pcs |
| Poids: | 320 [g] |
| Type d’emballage: | BOX |
| Petit paquet (nombre d'unités): | 6 |
Paramètres électro-physiques:
| Udc (URRM, UCEO, Umax) | 1200 [V] |
| Idc max (Tc/Ta=25÷160°C) | 947 [A] |
| Idc max (Tc/Ta=25°C) | 947 [A] |
| Idc max (Tc/Ta=80÷89°C) | 754 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] |
| IR (reverse current) | 1200 [µA] |
| Pd -s chladičem (Tc=25°C) | 3750 [W] |
| Input Logic Level (Ugs level) | 20V |
| Rds(on) 10V (Ugs=10V) | 2.6 [mΩ] |
| trr recovery time (If=Inom.,@25°C) | 90 [ns] |
| tr (Turn-on / rise time) | 55 [ns] |
| tf (turn-off=fall time) | 67 [ns] |
| Ft (transition/operation frequency) (@Inom.) | 0.06 [MHz] |
| Qg (Total Gate Charge) | 2784 [nC] |
| Cin/CL Load Capacitance | 36240 pF |
Paramètres thermiques et mécaniques:
| Tmin (température minimale de travail) | -40 [°C] |
| Tmax (température maximale de service) | 175 [°C] |
| Rthjc (case) | 0.075 [°C/W] |
| Rthjc1 IGBT | 0.04 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.109 [°C/W] |
| PIN dimensions | 0.00 [mm] |
!_souvisejici zbozi_! - MSCSM120AM02CT6LIAG
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I+SEMITRANS3- 62x106=005W-AL Thermally Conductive Pad for insulated Packages as SEMITRANS-3 and in size 62x106mm ID: 176035 Marquage Fabricant: F05-AL2-62x106mm
| Stock total: 803 Fabricant: - |
Les prix sont indiqués hors TVA et n’incluent pas les frais d’expédition, auxquels s’ajouteront à l’ordre sous un poste distinct.
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