MOSFET 1200V Full SiC Very Low Stray Inductance Phase Leg SiCThe following are the features of MSCSM120AM02CT6LIAG device:
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
Informations de base :
Marquage fabricant | MSCSM120AM02CT6LIAG |
Type of casing: | MODUL |
Cas: | !_modul-t6li_! |
Kategorie | Full SiC (MOS+D) |
Type de composant: | !_n-mosfet_! |
Configuration: | !_half bridge_! |
Type de matériel: | !_sic full_! |
Material Base | Cu |
RoHS | Oui |
REACH | Oui |
NOVINKA | A |
RoHS1 | Ano |
UL94 | V-0 |
Emballage et poids :
Unité: | pcs |
Poids: | 320 [g] |
Type d’emballage: | BOX |
Petit paquet (nombre d'unités): | 6 |
Paramètres électro-physiques:
Udc (URRM, UCEO, Umax) | 1200 [V] |
Idc max (Tc/Ta=25÷160°C) | 947 [A] |
Idc max (Tc/Ta=25°C) | 947 [A] |
Idc max (Tc/Ta=80÷89°C) | 754 [A] |
Uisol (@25°C/1min/50Hz) | 4000 [V] |
UF (maximum forward voltage) | 1.8 [VDC] |
IR (reverse current) | 1200 [µA] |
Pd -s chladičem (Tc=25°C) | 3750 [W] |
Input Logic Level (Ugs level) | 20V |
Rds(on) 10V (Ugs=10V) | 2.6 [mΩ] |
trr recovery time (If=Inom.,@25°C) | 90 [ns] |
tr (Turn-on / rise time) | 55 [ns] |
tf (turn-off=fall time) | 67 [ns] |
Ft (transition/operation frequency) (@Inom.) | 0.06 [MHz] |
Qg (Total Gate Charge) | 2784 [nC] |
Cin/CL Load Capacitance | 36240 pF |
Paramètres thermiques et mécaniques:
Tmin (température minimale de travail) | -40 [°C] |
Tmax (température maximale de service) | 175 [°C] |
Rthjc (case) | 0.075 [°C/W] |
Rthjc1 IGBT | 0.04 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.109 [°C/W] |
PIN dimensions | 0.00 [mm] |