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MSCSM120AM042CT6LIAG
MOSFET 1200V Full SiC MOS + SiC Diode
!_prilohy_!:
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| ID Code: | 185959 |
| Fabricant: | Microchip Technology |
| Prix avec TVA : | 1 447,330385 € |
| Prix hors TVA : | 1 196,140814 € |
| VAT: | 21 % |
| Disponibilité: | sur demande |
| Stock total: | 0 pcs |
| Marquage fabricant: | MSCSM120AM042CT6LIAG |
| Entrepôt central Zdice: | 0 pcs |
| Unité:: | pcs |
| Aperçu des remises sur volume | Quantité (pcs) | Prix hors TVA | Prix avec TVA | |
| 1 + | 1 196,140814 € | 1 447,330385 € | ||
| 5 + | 1 146,301613 € | 1 387,024952 € | ||
| 10 + | 1 096,462413 € | 1 326,719519 € | ||
| 25 + | 1 046,623212 € | 1 266,414087 € |
MOSFET 1200V Full SiC Very Low Stray Inductance Phase Leg SiCThe following are the features of MSCSM120AM02CT6LIAG device:
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
Informations de base :
| Marquage fabricant | MSCSM120AM042CT6LIAG |
| Type de composant: | SiC MOSFET Tranzistor |
| Kategorie | Full SiC (MOS-BD+D) |
| Configuration: | Half Bridge 1*(Phase Leg) |
| Spécifications: | !_sic n-channel mosfet_! |
| Construction: | 2*FET-BD+2*D |
| Type de matériel: | SiC Full |
| RoHS | Oui |
| REACH | Non |
| Type of casing: | MODUL |
| Cas: | !_sp6li_! |
| NOVINKA | A |
| RoHS1 | Ano |
| UL94 | V-0 |
Emballage et poids :
| Unité: | pcs |
| Poids: | 350 [g] |
| Type d’emballage: | BOX |
| Petit paquet (nombre d'unités): | 1 |
Paramètres électro-physiques:
| Udc (URRM, UCEO, Umax) | 1200 [V] |
| Idc max (Tc/Ta=25÷160°C) | 495 [A] |
| Idc max (Tc/Ta=25°C) | 495 [A] |
| Idc max (Tc/Ta=80÷89°C) | 395 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] |
| IR (reverse current) | 1200 [µA] |
| Pd -s chladičem (Tc=25°C) | 2031 [W] |
| Input Logic Level (Ugs level) | 20V |
| Rds(on) 10V (Ugs=10V) | 5.2 [mΩ] |
| trr recovery time (If=Inom.,@25°C) | 90 [ns] |
| tr (Turn-on / rise time) | 55 [ns] |
| tf (turn-off=fall time) | 67 [ns] |
| Qg (Total Gate Charge) | 1392 [nC] |
| Cin/CL Load Capacitance | 18100 pF |
Paramètres thermiques et mécaniques:
| Tmin (température minimale de travail) | -40 [°C] |
| Tmax (température maximale de service) | 175 [°C] |
| Rthjc (case) | 0.075 [°C/W] |
| Rthjc1 IGBT | 0.074 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.175 [°C/W] |
| W - Largeur | 62 [mm] |
| L - Longueur | 108 [mm] |
| H - Hauteur | 22 [mm] |
| Rozměry/Velikost (LxWxH) | 108x62x22 [mm] |
!_souvisejici zbozi_! - MSCSM120AM042CT6LIAG
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