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MSCSM120AM50CT1AG
Full SiC MOSFET 1200V / 44A
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| ID Code: | 186149 |
| Fabricant: | Microchip Technology |
| Prix avec TVA : | 127,698347 € |
| Prix hors TVA : | 105,535824 € |
| VAT: | 21 % |
| Disponibilité: | En stock |
| Stock total: | 9 pcs |
| Marquage fabricant: | MSCSM120AM50CT1AG |
| Entrepôt central Zdice: | 9 pcs |
| Unité:: | pcs |
| Aperçu des remises sur volume | Quantité (pcs) | Prix hors TVA | Prix avec TVA | |
| 1 + | 105,535824 € | 127,698347 € | ||
| 5 + | 101,138191 € | 122,377212 € | ||
| 10 + | 96,740559 € | 117,056077 € | ||
| 25 + | 92,343335 € | 111,735436 € |
• SiC Power MOSFET - High speed switching, - Low RDS(on), - Ultra low loss
• SiC Schottky Diode, - Zero reverse recovery, - Zero forward recovery, - Temperature Independent switching behavior, - Positive temperature coefficient on VF
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
• SiC Schottky Diode, - Zero reverse recovery, - Zero forward recovery, - Temperature Independent switching behavior, - Positive temperature coefficient on VF
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
Informations de base :
| Marquage fabricant | MSCSM120AM50CT1AG |
| Type de composant: | SiC MOSFET Tranzistor |
| Kategorie | Full SiC (MOS-BD+D) |
| Configuration: | Half Bridge 1*(Phase Leg) |
| Spécifications: | SiC N-Channel MOSFET |
| Construction: | 2*FET-BD+2*D |
| Type de cas: | Modul |
| Cas [inch] : | SP1F |
| Type de matériel: | SiC Full |
| RoHS | Oui |
| REACH | Non |
| NOVINKA | A |
| RoHS1 | Ano |
Emballage et poids :
| Unité: | pcs |
| Poids: | 96 [g] |
| Type d’emballage: | TUBE |
| Petit paquet (nombre d'unités): | 1 |
Paramètres électro-physiques:
| Udc (URRM, UCEO, Umax) | 1200 [V] |
| Idc max (Tc/Ta=80÷89°C) | 44 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] |
| Pd -s chladičem (Tc=25°C) | 245 [W] |
| Input Logic Level (Ugs level) | 20V |
| trr recovery time (If=Inom.,@25°C) | 31 [ns] |
| tr (Turn-on / rise time) | 30 [ns] |
| tf (turn-off=fall time) | 25 [ns] |
| Qg (Total Gate Charge) | 137 [nC] |
| Cin/CL Load Capacitance | 1990 pF |
Paramètres thermiques et mécaniques:
| Dimensions (L*W*H) [mm]: | 52x43x12 |
| Tmin (température minimale de travail) | -40 [°C] |
| Tmax (température maximale de service) | 150 [°C] |
| Rthjc1 IGBT | 0.61 [°C/W] |
| Rthjc2 Dioda, Tyristor | 1.55 [°C/W] |
| RM - Pitch pins | 3.8 [mm] |
| RM1 - Espacement de lignes | 38 [mm] |
| L - Longueur | 51.6 [mm] |
| W - Largeur | 42.5 [mm] |
| H - Hauteur | 12 [mm] |
| PIN dimensions | 1,4 [mm] |
| Lv - Length of outlets | 5.8 [mm] |