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MSCSM120TAM31CT3AG
SiC MOSFET 1200V / 71A SixPack
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| ID Code: | 186279 |
| Fabricant: | Microchip Technology |
| Prix avec TVA : | 529,085850 € |
| Prix hors TVA : | 437,261033 € |
| VAT: | 21 % |
| Disponibilité: | sur demande |
| Stock total: | 0 pcs |
| Marquage fabricant: | MSCSM120TAM31CT3AG |
| Délai de livraison en usine: | 42wk-49wk |
| Unité:: | pcs |
| Aperçu des remises sur volume | Quantité (pcs) | Prix hors TVA | Prix avec TVA | |
| 1 + | 437,261033 € | 529,085850 € | ||
| 5 + | 419,041362 € | 507,040048 € | ||
| 10 + | 400,822482 € | 484,995203 € | ||
| 25 + | 382,603206 € | 462,949879 € |
SiC MOSFET 1200V / 71A SixPack
The MSCSM120TAM31CT3AG device is designed for the following applications: • Uninterruptible Power Supplies • Switched Mode Power Supplies • EV motor and traction drive • Welding converters
• SiC Power MOSFET , High speed switching, Low RDS(on), Ultra low loss
• SiC Schottky Diode, Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
• Very low stray inductance • Kelvin source for easy drive • Internal thermistor for temperature monitoring • Aluminum nitride (AlN) substrate for improved thermal performance
The MSCSM120TAM31CT3AG device is designed for the following applications: • Uninterruptible Power Supplies • Switched Mode Power Supplies • EV motor and traction drive • Welding converters
• SiC Power MOSFET , High speed switching, Low RDS(on), Ultra low loss
• SiC Schottky Diode, Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
• Very low stray inductance • Kelvin source for easy drive • Internal thermistor for temperature monitoring • Aluminum nitride (AlN) substrate for improved thermal performance
Informations de base :
| Marquage fabricant | MSCSM120TAM31CT3AG |
| Délai de livraison en usine | 42wk-49wk [wk] |
| Type de composant: | SiC MOSFET Tranzistor |
| Kategorie | Full SiC (MOS-BD+D) |
| Configuration: | Bridge 3f |
| Spécifications: | SiC N-Channel MOSFET |
| Construction: | 6*FET-BD+6*D |
| Type de cas: | Modul |
| Cas [inch] : | SP3F |
| Type de matériel: | SiC Full |
| RoHS | Oui |
| REACH | Non |
| NOVINKA | A |
| RoHS1 | Ano |
Emballage et poids :
| Unité: | pcs |
| Poids: | 125 [g] |
| Type d’emballage: | BOX |
| Petit paquet (nombre d'unités): | 1 |
Paramètres électro-physiques:
| Udc (URRM, UCEO, Umax) | 1200 [V] |
| Idc max (Tc/Ta=80÷89°C) | 71 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] |
| Pd -s chladičem (Tc=25°C) | 395 [W] |
| Input Logic Level (Ugs level) | 20V |
| tr (Turn-on / rise time) | 30 [ns] |
| tf (turn-off=fall time) | 25 [ns] |
| Qg (Total Gate Charge) | 232 [nC] |
| Cin/CL Load Capacitance | 3020 pF |
Paramètres thermiques et mécaniques:
| Dimensions (L*W*H) [mm]: | 73x43x12 |
| Tmin (température minimale de travail) | -40 [°C] |
| Tmax (température maximale de service) | 125 [°C] |
| Rthjc (case) | 0.075 [°C/W] |
| Rthjc1 IGBT | 0.38 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.9 [°C/W] |
| RM - Pitch pins | 3.81 [mm] |
| RM1 - Espacement de lignes | 38 [mm] |
| L - Longueur | 73.4 [mm] |
| W - Largeur | 42.5 [mm] |
| H - Hauteur | 12 [mm] |
| PIN dimensions | 1,35 [mm] |
| Lv - Length of outlets | 5.3 [mm] |
Alternatives et remplacements
| Alternative 1: | 183781 - CCS050M12CM2 (CRE) |
| Produits de substitution 1: | CCB032M12FM3 |