MOSFET 1700V Full SiC Very Low Stray Inductance Phase Leg SiCThe following are the features of MSCSM170AM058CT6LIAG device:
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
Informations de base :
Marquage fabricant | MSCSM170AM058CT6LIAG |
Délai de livraison en usine | 42wk-49wk [wk] |
Type de composant: | SiC MOSFET Tranzistor |
Kategorie | Full SiC (MOS-BD+D) |
Configuration: | Half Bridge 1*(Phase Leg) |
Spécifications: | SiC N-Channel MOSFET |
Construction: | 2*FET-BD+2*D |
Type de cas: | Modul |
Cas [inch] : | SP6LI |
Type de matériel: | SiC Full |
RoHS | Oui |
REACH | Non |
NOVINKA | A |
RoHS1 | Ano |
UL94 | V-0 |
Emballage et poids :
Unité: | pcs |
Poids: | 350 [g] |
Type d’emballage: | BOX |
Petit paquet (nombre d'unités): | 1 |
Paramètres électro-physiques:
Udc (URRM, UCEO, Umax) | 1700 [V] |
Idc max (Tc/Ta=80÷89°C) | 281 [A] |
Uisol (@25°C/1min/50Hz) | 4000 [V] |
UF (maximum forward voltage) | 1.8 [VDC] |
IR (reverse current) | 3000 [µA] |
Pd -s chladičem (Tc=25°C) | 1642 [W] |
Input Logic Level (Ugs level) | 20V |
trr recovery time (If=Inom.,@25°C) | 27 [ns] |
tr (Turn-on / rise time) | 48 [ns] |
tf (turn-off=fall time) | 30 [ns] |
Qg (Total Gate Charge) | 1068 [nC] |
Cin/CL Load Capacitance | 19800 pF |
Paramètres thermiques et mécaniques:
Dimensions (L*W*H) [mm]: | 108x62x22 |
Tmin (température minimale de travail) | -40 [°C] |
Tmax (température maximale de service) | 175 [°C] |
Rthjc (case) | 0.075 [°C/W] |
Rthjc1 IGBT | 0.09 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.1 [°C/W] |
L - Longueur | 108 [mm] |
W - Largeur | 62 [mm] |
H - Hauteur | 22 [mm] |
Alternatives et remplacements
Alternative 1: | 186152 - MSCMC170AM08CT6LIAG (MCH) |