IGBT4 = 4th generation medium fast trench IGBT (Infineon)
CAL4 = Soft switching 4th generation CAL-Diode
Insulated copper baseplate using DBC Technology (Direct Copper Bonding)
With integrated Gate resistor
For switching frequencies up to 8kHz
UL recognized, file no. E63532
Informations de base :
Marquage fabricant | SKM200GB17E4 |
Type of casing: | MODUL |
Cas: | SEMITRANS-3 |
Kategorie | IGBT Full Silicon |
Configuration: | !_half bridge_! |
Type de matériel: | !_si-silicon_! |
Material Base | Cu |
RoHS | Oui |
REACH | Non |
NOVINKA | N |
RoHS1 | Ano |
Emballage et poids :
Unité: | pcs |
Poids: | 320.52 [g] |
Type d’emballage: | BOX |
Petit paquet (nombre d'unités): | 12 |
Paramètres électro-physiques:
Udc (URRM, UCEO, Umax) | 1700 [V] |
Idc max (Tc/Ta=25÷160°C) | 321 [A] |
Idc max (Tc/Ta=25°C) | 321 [A] |
Idc max (Tc/Ta=80÷89°C) | 248 [A] |
Uisol (@25°C/1min/50Hz) | 4000 [V] |
UF (maximum forward voltage) | 2 [VDC] |
UCE (sat) (@25°C) | 1.9 [V] |
tr (Turn-on / rise time) | 35 [ns] |
tf (turn-off=fall time) | 149 [ns] |
Ft (transition/operation frequency) (@Inom.) | 0.008 [MHz] |
Qg (Total Gate Charge) | 1600 [nC] |
Cin/CL Load Capacitance | 18000 pF |
Paramètres thermiques et mécaniques:
Tmin (température minimale de travail) | -40 [°C] |
Tmax (température maximale de service) | 175 [°C] |
Rthjc (case) | 0.122 [°C/W] |
PIN dimensions | 0.00 [mm] |
Alternatives et remplacements
Produits de substitution 1: | FF200R17KE4 |
Produits de substitution 2: | 5SNG0200Q170300 |